Literature DB >> 16178251

Microwave detection at 110 Ghz by nanowires with broken symmetry.

C Balocco1, A M Song, M Aberg, A Forchel, T González, J Mateos, I Maximov, M Missous, A A Rezazadeh, J Saijets, L Samuelson, D Wallin, K Williams, L Worschech, H Q Xu.   

Abstract

By using arrays of nanowires with intentionally broken symmetry, we were able to detect microwaves up to 110 GHz at room temperature. This is, to the best of our knowledge, the highest speed that has been demonstrated in different types of novel electronic nanostructures to date. Our experiments showed a rather stable detection sensitivity over a broad frequency range from 100 MHz to 110 GHz. The novel working principle enabled the nanowires to detect microwaves efficiently without a dc bias. In principle, the need for only one high-resolution lithography step and the planar architecture allow an arbitrary number of nanowires to be made by folding a linear array as many times as required over a large area, for example, a whole wafer. Our experiment on 18 parallel nanowires showed a sensitivity of approximately 75 mV dc output/mW of nominal input power of the 110 GHz signal, even though only about 0.4% of the rf power was effectively applied to the structure because of an impedance mismatch. Because this array of nanowires operates simultaneously, low detection noise was achieved, allowing us to detect -25 dBm 110 GHz microwaves at zero bias with a standard setup.

Mesh:

Year:  2005        PMID: 16178251     DOI: 10.1021/nl050779g

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  3 in total

1.  Anomalous high capacitance in a coaxial single nanowire capacitor.

Authors:  Zheng Liu; Yongjie Zhan; Gang Shi; Simona Moldovan; Mohamed Gharbi; Li Song; Lulu Ma; Wei Gao; Jiaqi Huang; Robert Vajtai; Florian Banhart; Pradeep Sharma; Jun Lou; Pulickel M Ajayan
Journal:  Nat Commun       Date:  2012-06-06       Impact factor: 14.919

2.  Highly Effective Conductance Modulation in Planar Silicene Field Effect Devices Due to Buckling.

Authors:  Feras Al-Dirini; Faruque M Hossain; Mahmood A Mohammed; Ampalavanapillai Nirmalathas; Efstratios Skafidas
Journal:  Sci Rep       Date:  2015-10-06       Impact factor: 4.379

3.  All-graphene planar self-switching MISFEDs, Metal-Insulator-Semiconductor Field-Effect Diodes.

Authors:  Feras Al-Dirini; Faruque M Hossain; Ampalavanapillai Nirmalathas; Efstratios Skafidas
Journal:  Sci Rep       Date:  2014-02-05       Impact factor: 4.379

  3 in total

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