Literature DB >> 15635405

Quantized conductance atomic switch.

K Terabe1, T Hasegawa, T Nakayama, M Aono.   

Abstract

A large variety of nanometre-scale devices have been investigated in recent years that could overcome the physical and economic limitations of current semiconductor devices. To be of technological interest, the energy consumption and fabrication cost of these 'nanodevices' need to be low. Here we report a new type of nanodevice, a quantized conductance atomic switch (QCAS), which satisfies these requirements. The QCAS works by controlling the formation and annihilation of an atomic bridge at the crossing point between two electrodes. The wires are spaced approximately 1 nm apart, and one of the two is a solid electrolyte wire from which the atomic bridges are formed. We demonstrate that such a QCAS can switch between 'on' and 'off' states at room temperature and in air at a frequency of 1 MHz and at a small operating voltage (600 mV). Basic logic circuits are also easily fabricated by crossing solid electrolyte wires with metal electrodes.

Year:  2005        PMID: 15635405     DOI: 10.1038/nature03190

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  83 in total

1.  Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces.

Authors:  Ilia Valov; Ina Sapezanskaia; Alpana Nayak; Tohru Tsuruoka; Thomas Bredow; Tsuyoshi Hasegawa; Georgi Staikov; Masakazu Aono; Rainer Waser
Journal:  Nat Mater       Date:  2012-04-29       Impact factor: 43.841

2.  Observation of conducting filament growth in nanoscale resistive memories.

Authors:  Yuchao Yang; Peng Gao; Siddharth Gaba; Ting Chang; Xiaoqing Pan; Wei Lu
Journal:  Nat Commun       Date:  2012-03-13       Impact factor: 14.919

3.  Complementary resistive switches for passive nanocrossbar memories.

Authors:  Eike Linn; Roland Rosezin; Carsten Kügeler; Rainer Waser
Journal:  Nat Mater       Date:  2010-04-18       Impact factor: 43.841

4.  Reversible switching between p- and n-type conduction in the semiconductor Ag10Te4Br3.

Authors:  Tom Nilges; Stefan Lange; Melanie Bawohl; Jens Markus Deckwart; Martin Janssen; Hans-Dieter Wiemhöfer; Rodolphe Decourt; Bernard Chevalier; Julia Vannahme; Hellmut Eckert; Richard Weihrich
Journal:  Nat Mater       Date:  2009-01-18       Impact factor: 43.841

5.  Mixed conductors: The bridge to redox switches.

Authors:  Jürgen Janek
Journal:  Nat Mater       Date:  2009-02       Impact factor: 43.841

6.  A current-driven single-atom memory.

Authors:  C Schirm; M Matt; F Pauly; J C Cuevas; P Nielaba; E Scheer
Journal:  Nat Nanotechnol       Date:  2013-09-01       Impact factor: 39.213

7.  Cross-polarized excitons in carbon nanotubes.

Authors:  Svetlana Kilina; Sergei Tretiak; Stephen K Doorn; Zhengtang Luo; Fotios Papadimitrakopoulos; Andrei Piryatinski; Avadh Saxena; Alan R Bishop
Journal:  Proc Natl Acad Sci U S A       Date:  2008-05-07       Impact factor: 11.205

8.  Atomic force microscopy as a tool for atom manipulation.

Authors:  Oscar Custance; Ruben Perez; Seizo Morita
Journal:  Nat Nanotechnol       Date:  2009-12       Impact factor: 39.213

9.  Short-term plasticity and long-term potentiation mimicked in single inorganic synapses.

Authors:  Takeo Ohno; Tsuyoshi Hasegawa; Tohru Tsuruoka; Kazuya Terabe; James K Gimzewski; Masakazu Aono
Journal:  Nat Mater       Date:  2011-06-26       Impact factor: 43.841

10.  Scanning probe microscopy: Taking a closer look at conductivity.

Authors:  Julie V Macpherson
Journal:  Nat Nanotechnol       Date:  2011-02       Impact factor: 39.213

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