Literature DB >> 15245308

Spatial structure of an individual Mn acceptor in GaAs.

A M Yakunin1, A Yu Silov, P M Koenraad, J H Wolter, W Van Roy, J De Boeck, J-M Tang, M E Flatté.   

Abstract

The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, crosslike shape is observed. The spatial structure is compared with that from an envelope-function, effective mass model and from a tight-binding model. This demonstrates that anisotropy arising from the cubic symmetry of the GaAs crystal produces the crosslike shape for the hole wave function. Thus the coupling between Mn dopants in GaMnAs mediated by such holes will be highly anisotropic.

Year:  2004        PMID: 15245308     DOI: 10.1103/PhysRevLett.92.216806

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Single dopants in semiconductors.

Authors:  Paul M Koenraad; Michael E Flatté
Journal:  Nat Mater       Date:  2011-02       Impact factor: 43.841

2.  Quantum simulation of the Hubbard model with dopant atoms in silicon.

Authors:  J Salfi; J A Mol; R Rahman; G Klimeck; M Y Simmons; L C L Hollenberg; S Rogge
Journal:  Nat Commun       Date:  2016-04-20       Impact factor: 14.919

  2 in total

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