Literature DB >> 15245040

Cavity polaritons in InGaN microcavities at room temperature.

T Tawara1, H Gotoh, T Akasaka, N Kobayashi, T Saitoh.   

Abstract

Cavity polaritons are observed in InGaN quantum well (QW) microcavities at room temperature. High-quality microcavities are fabricated by the wafer-bonding of InGaN QW layers and dielectric distributed Bragg reflectors. The anticrossing behavior of strong exciton-photon coupling is confirmed by vacuum-field Rabi splitting obtained from reflection measurements. This strong coupling is also enhanced by increasing the integrated oscillator strength coupled to the cavity mode. The oscillator strength of InGaN QW excitons is 1 order of magnitude larger than that of GaAs QW excitons.

Year:  2004        PMID： 15245040     DOI： 10.1103/PhysRevLett.92.256402

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


  3 in total

1.  Room-temperature fluorescence lifetime of pseudoisocyanine (PIC) J excitons with various aggregate morphologies in relation to microcavity polariton formation.

Authors:  Yuki Obara; Keita Saitoh; Masaru Oda; Toshiro Tani
Journal:  Int J Mol Sci       Date:  2012-05-15       Impact factor: 6.208

2.  Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities.

Authors:  Tim J Puchtler; Alexander Woolf; Tongtong Zhu; David Gachet; Evelyn L Hu; Rachel A Oliver
Journal:  ACS Photonics       Date:  2014-12-17       Impact factor: 7.529

3.  A hybrid organic-inorganic polariton LED.

Authors:  Rahul Jayaprakash; Kyriacos Georgiou; Harriet Coulthard; Alexis Askitopoulos; Sai K Rajendran; David M Coles; Andrew J Musser; Jenny Clark; Ifor D W Samuel; Graham A Turnbull; Pavlos G Lagoudakis; David G Lidzey
Journal:  Light Sci Appl       Date:  2019-09-04       Impact factor: 17.782
  3 in total

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