Literature DB >> 12935094

Breakdown of a Mott insulator: a nonadiabatic tunneling mechanism.

Takashi Oka1, Ryotaro Arita, Hideo Aoki.   

Abstract

Time-dependent nonequilibrium properties of a strongly correlated electron system driven by large electric fields is obtained by means of solving the time-dependent Schrödinger equation for the many-body wave function numerically in one dimension. While the insulator-to-metal transition depends on the electric field and the interaction, the metallization is found to be described in terms of a universal Landau-Zener quantum tunneling among the many-body levels. These processes induce current oscillation for small systems, while giving rise to finite resistivity through dissipation for larger systems/on longer time scales.

Entities:  

Year:  2003        PMID: 12935094     DOI: 10.1103/PhysRevLett.91.066406

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  4 in total

1.  Avalanche breakdown in GaTa4Se(8-x)Te(x) narrow-gap Mott insulators.

Authors:  V Guiot; L Cario; E Janod; B Corraze; V Ta Phuoc; M Rozenberg; P Stoliar; T Cren; D Roditchev
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

2.  Spiers Memorial Lecture: From optical to THz control of materials.

Authors:  Steven L Johnson
Journal:  Faraday Discuss       Date:  2022-09-15       Impact factor: 4.394

3.  Field-Driven Mott Gap Collapse and Resistive Switch in Correlated Insulators.

Authors:  G Mazza; A Amaricci; M Capone; M Fabrizio
Journal:  Phys Rev Lett       Date:  2016-10-20       Impact factor: 9.161

4.  Universality and critical behavior of the dynamical Mott transition in a system with long-range interactions.

Authors:  Louk Rademaker; Valerii M Vinokur; Alexey Galda
Journal:  Sci Rep       Date:  2017-03-16       Impact factor: 4.379

  4 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.