Comparative study of the high-pressure behavior of As, Sb, and Bi.

The high-pressure behavior of the heavier group 15 elements As, Sb, and Bi was investigated by means of ab initio density functional calculations employing pseudopotentials and a plane wave basis set. The high-pressure structural sequence of these elements is distinguished by the occurrence of the Bi-III structure, which is a complex, incommensurately modulated, host-guest structure. We approximated this structure by a supercell which reproduced the experimentally established pressure stability ranges of the host-guest structure for the different elements extremely well. With pressure we find an increasing admixture of d states (s-d hybridization) in the occupied levels of the electronic structure of As, Sb, and Bi. However, the s-d mixing remains at a low level. Thus, the emergence of a complex intermediate pressure structure cannot be explained by a pressure-induced altered valence state for these elements. Instead, it is argued that the Bi-III structure is a consequence of a delicate interplay between the electrostatic and the band energy contribution to the total energy. In the intermediate pressure range of heavier group 15 elements, both important parts of the total energy account equally for structural stability.