Literature DB >> 11801039

Exchange in silicon-based quantum computer architecture.

Belita Koiller1, Xuedong Hu, S Das Sarma.   

Abstract

The silicon-based quantum computer proposal has been one of the actively pursued ideas during the past three years. Here we calculate the donor electron exchange in silicon and germanium, and demonstrate an atomic-scale challenge for quantum computing in Si (and Ge), as the six (four) conduction-band minima in Si (Ge) lead to intervalley electronic interference, generating strong oscillations in the exchange splitting of two-donor two-electron states. Donor positioning with atomic-scale precision within the unit cell thus becomes a decisive factor in determining the strength of the exchange coupling-a fundamental ingredient for two-qubit operations in a silicon-based quantum computer.

Entities:  

Year:  2001        PMID: 11801039     DOI: 10.1103/PhysRevLett.88.027903

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  18 in total

1.  A single-atom transistor.

Authors:  Martin Fuechsle; Jill A Miwa; Suddhasatta Mahapatra; Hoon Ryu; Sunhee Lee; Oliver Warschkow; Lloyd C L Hollenberg; Gerhard Klimeck; Michelle Y Simmons
Journal:  Nat Nanotechnol       Date:  2012-02-19       Impact factor: 39.213

2.  Spatially resolving valley quantum interference of a donor in silicon.

Authors:  J Salfi; J A Mol; R Rahman; G Klimeck; M Y Simmons; L C L Hollenberg; S Rogge
Journal:  Nat Mater       Date:  2014-04-06       Impact factor: 43.841

3.  Low-Resistance, High-Yield Electrical Contacts to Atom Scale Si:P Devices Using Palladium Silicide.

Authors:  Scott W Schmucker; Pradeep N Namboodiri; Ranjit Kashid; Xiqiao Wang; Binhui Hu; Jonathan E Wyrick; Alline F Myers; Joshua D Schumacher; Richard M Silver; M D Stewart
Journal:  Phys Rev Appl       Date:  2019       Impact factor: 4.985

4.  Optical Control of Donor Spin Qubits in Silicon.

Authors:  M J Gullans; J M Taylor
Journal:  Phys Rev B Condens Matter Mater Phys       Date:  2015-11-11

5.  Engineering topological states in atom-based semiconductor quantum dots.

Authors:  M Kiczynski; S K Gorman; H Geng; M B Donnelly; Y Chung; Y He; J G Keizer; M Y Simmons
Journal:  Nature       Date:  2022-06-22       Impact factor: 69.504

6.  Spin blockade and exchange in Coulomb-confined silicon double quantum dots.

Authors:  Bent Weber; Y H Matthias Tan; Suddhasatta Mahapatra; Thomas F Watson; Hoon Ryu; Rajib Rahman; Lloyd C L Hollenberg; Gerhard Klimeck; Michelle Y Simmons
Journal:  Nat Nanotechnol       Date:  2014-04-13       Impact factor: 39.213

7.  Genetic design of enhanced valley splitting towards a spin qubit in silicon.

Authors:  Lijun Zhang; Jun-Wei Luo; Andre Saraiva; Belita Koiller; Alex Zunger
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

8.  Characterizing Si:P quantum dot qubits with spin resonance techniques.

Authors:  Yu Wang; Chin-Yi Chen; Gerhard Klimeck; Michelle Y Simmons; Rajib Rahman
Journal:  Sci Rep       Date:  2016-08-23       Impact factor: 4.379

9.  Silicon quantum processor with robust long-distance qubit couplings.

Authors:  Guilherme Tosi; Fahd A Mohiyaddin; Vivien Schmitt; Stefanie Tenberg; Rajib Rahman; Gerhard Klimeck; Andrea Morello
Journal:  Nat Commun       Date:  2017-09-06       Impact factor: 14.919

10.  Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon.

Authors:  Daniel W Drumm; Akin Budi; Manolo C Per; Salvy P Russo; Lloyd C L Hollenberg
Journal:  Nanoscale Res Lett       Date:  2013-02-27       Impact factor: 4.703

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