Literature DB >> 11711666

Spintronics: a spin-based electronics vision for the future.

S A Wolf1, D D Awschalom, R A Buhrman, J M Daughton, S von Molnár, M L Roukes, A Y Chtchelkanova, D M Treger.   

Abstract

This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.

Year:  2001        PMID: 11711666     DOI: 10.1126/science.1065389

Source DB:  PubMed          Journal:  Science        ISSN: 0036-8075            Impact factor:   47.728


  285 in total

1.  On the sharpness of the interfaces in metallic multilayers.

Authors:  E Holmström; L Nordström; L Bergqvist; B Skubic; B Hjörvarsson; I A Abrikosov; P Svedlindh; O Eriksson
Journal:  Proc Natl Acad Sci U S A       Date:  2004-03-26       Impact factor: 11.205

2.  Valley polarization in MoS2 monolayers by optical pumping.

Authors:  Hualing Zeng; Junfeng Dai; Wang Yao; Di Xiao; Xiaodong Cui
Journal:  Nat Nanotechnol       Date:  2012-06-17       Impact factor: 39.213

3.  Nanoscale scanning probe ferromagnetic resonance imaging using localized modes.

Authors:  Inhee Lee; Yuri Obukhov; Gang Xiang; Adam Hauser; Fengyuan Yang; Palash Banerjee; Denis V Pelekhov; P Chris Hammel
Journal:  Nature       Date:  2010-08-12       Impact factor: 49.962

4.  Robust isothermal electric control of exchange bias at room temperature.

Authors:  Xi He; Yi Wang; Ning Wu; Anthony N Caruso; Elio Vescovo; Kirill D Belashchenko; Peter A Dowben; Christian Binek
Journal:  Nat Mater       Date:  2010-06-20       Impact factor: 43.841

5.  Spin Seebeck insulator.

Authors:  K Uchida; J Xiao; H Adachi; J Ohe; S Takahashi; J Ieda; T Ota; Y Kajiwara; H Umezawa; H Kawai; G E W Bauer; S Maekawa; E Saitoh
Journal:  Nat Mater       Date:  2010-09-26       Impact factor: 43.841

6.  Direct measurement of the electronic spin diffusion length in a fully functional organic spin valve by low-energy muon spin rotation.

Authors:  A J Drew; J Hoppler; L Schulz; F L Pratt; P Desai; P Shakya; T Kreouzis; W P Gillin; A Suter; N A Morley; V K Malik; A Dubroka; K W Kim; H Bouyanfif; F Bourqui; C Bernhard; R Scheuermann; G J Nieuwenhuys; T Prokscha; E Morenzoni
Journal:  Nat Mater       Date:  2008-11-23       Impact factor: 43.841

7.  Spin polarization in half-metals probed by femtosecond spin excitation.

Authors:  Georg M Müller; Jakob Walowski; Marija Djordjevic; Gou-Xing Miao; Arunava Gupta; Ana V Ramos; Kai Gehrke; Vasily Moshnyaga; Konrad Samwer; Jan Schmalhorst; Andy Thomas; Andreas Hütten; Günter Reiss; Jagadeesh S Moodera; Markus Münzenberg
Journal:  Nat Mater       Date:  2008-12-14       Impact factor: 43.841

8.  Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor.

Authors:  X J Wang; I A Buyanova; F Zhao; D Lagarde; A Balocchi; X Marie; C W Tu; J C Harmand; W M Chen
Journal:  Nat Mater       Date:  2009-02-15       Impact factor: 43.841

9.  Solid-state physics: Bouncing spins.

Authors:  Lieven M K Vandersypen
Journal:  Nature       Date:  2009-04-16       Impact factor: 49.962

10.  How spintronics went from the lab to the iPod.

Authors:  W Patrick McCray
Journal:  Nat Nanotechnol       Date:  2009-01       Impact factor: 39.213

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