Literature DB >> 11397942

Ultraviolet emission from a diamond pn junction.

S Koizumi1, K Watanabe, M Hasegawa, H Kanda.   

Abstract

We report the realization of an ultraviolet light-emitting diode with the use of a diamond pn junction. The pn junction was formed from a boron-doped p-type diamond layer and phosphorus-doped n-type diamond layer grown epitaxially on the 111 surface of single crystalline diamond. The pn junction exhibited good diode characteristics, and at forward bias of about 20 volts strong ultraviolet light emission at 235 nanometers was observed and was attributed to free exciton recombination.

Entities:  

Year:  2001        PMID： 11397942     DOI： 10.1126/science.1060258

Source DB:  PubMed          Journal:  Science        ISSN： 0036-8075            Impact factor:   47.728


  6 in total

1.  Atomic structure of luminescent centers in high-efficiency Ce-doped w-AlN single crystal.

Authors:  Ryo Ishikawa; Andrew R Lupini; Fumiyasu Oba; Scott D Findlay; Naoya Shibata; Takashi Taniguchi; Kenji Watanabe; Hiroyuki Hayashi; Toshifumi Sakai; Isao Tanaka; Yuichi Ikuhara; Stephen J Pennycook
Journal:  Sci Rep       Date:  2014-01-21       Impact factor: 4.379

2.  An effective method to improve the growth rate of large single crystal diamonds under HPHT processes: optimized design of the catalyst geometric construction.

Authors:  Yadong Li; Chunxiao Wang; Liangchao Chen; Longsuo Guo; Zhuangfei Zhang; Chao Fang; Hongan Ma
Journal:  RSC Adv       Date:  2019-10-09       Impact factor: 3.361

3.  Vacuum ultraviolet field emission lamp consisting of neodymium ion doped lutetium fluoride thin film as phosphor.

Authors:  Masahiro Yanagihara; Takayuki Tsuji; Mohd Zamri Yusop; Masaki Tanemura; Shingo Ono; Tomohito Nagami; Kentaro Fukuda; Toshihisa Suyama; Yuui Yokota; Takayuki Yanagida; Akira Yoshikawa
Journal:  ScientificWorldJournal       Date:  2014-09-11

4.  Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices.

Authors:  Junfeng Lu; Zengliang Shi; Yueyue Wang; Yi Lin; Qiuxiang Zhu; Zhengshan Tian; Jun Dai; Shufeng Wang; Chunxiang Xu
Journal:  Sci Rep       Date:  2016-05-16       Impact factor: 4.379

Review 5.  An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors.

Authors:  Jiangwei Liu; Yasuo Koide
Journal:  Sensors (Basel)       Date:  2018-06-04       Impact factor: 3.576

6.  Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping.

Authors:  Jiaming Wang; Mingxing Wang; Fujun Xu; Baiyin Liu; Jing Lang; Na Zhang; Xiangning Kang; Zhixin Qin; Xuelin Yang; Xinqiang Wang; Weikun Ge; Bo Shen
Journal:  Light Sci Appl       Date:  2022-03-24       Impact factor: 17.782
  6 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.