Literature DB >> 10042020

Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors.

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Abstract

Entities:  

Year:  1990        PMID： 10042020     DOI： 10.1103/PhysRevLett.64.579

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  1 in total

1.  Capacitance-Based Dosimetry of Co-60 Radiation using Fully-Depleted Silicon-on-Insulator Devices.

Authors:  Yulong Li; Warren M Porter; Rui Ma; Margaret A Reynolds; Bruce J Gerbi; Steven J Koester
Journal:  IEEE Trans Nucl Sci       Date:  2015-11-09       Impact factor: 1.679
  1 in total

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