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Literature DB >> 9999971

Initial growth of Bi films on a Si(111) substrate: Two phases of sqrt 3 x sqrt 3 low-energy-electron-diffraction pattern and their geometric structures.

Abstract

Entities: Chemical

Year: 1991 PMID： 9999971 DOI： 10.1103/physrevb.44.3471

Source DB: PubMed Journal: Phys Rev B Condens Matter ISSN： 0163-1829

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2 in total

1. Evidence of sp²-like Hybridization of Silicon Valence Orbitals in Thin and Thick Si Grown on α-Phase Si(111)√3 × √3R30°-Bi.

Authors: David Garagnani; Paola De Padova; Carlo Ottaviani; Claudio Quaresima; Amanda Generosi; Barbara Paci; Bruno Olivieri; Mieczysław Jałochowski; Mariusz Krawiec
Journal: Materials (Basel) Date: 2022-02-25 Impact factor: 3.623

2. Evolution of topological surface states in antimony ultra-thin films.

Authors: Guanggeng Yao; Ziyu Luo; Feng Pan; Wentao Xu; Yuan Ping Feng; Xue-sen Wang
Journal: Sci Rep Date: 2013 Impact factor: 4.379

2 in total

Initial growth of Bi films on a Si(111) substrate: Two phases of sqrt 3 x sqrt 3 low-energy-electron-diffraction pattern and their geometric structures.

1. Evidence of sp2-like Hybridization of Silicon Valence Orbitals in Thin and Thick Si Grown on α-Phase Si(111)√3 × √3R30°-Bi.

2. Evolution of topological surface states in antimony ultra-thin films.

1. Evidence of sp²-like Hybridization of Silicon Valence Orbitals in Thin and Thick Si Grown on α-Phase Si(111)√3 × √3R30°-Bi.