Literature DB >> 9999721

Interaction of H and H2 with the silicon dangling orbital at the <111> Si/SiO2 interface.

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Abstract

Entities:  

Year:  1991        PMID： 9999721     DOI： 10.1103/physrevb.44.1832

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  3 in total

1.  Efficient Direct Reduction of Graphene Oxide by Silicon Substrate.

Authors:  Su Chan Lee; Surajit Some; Sung Wook Kim; Sun Jun Kim; Jungmok Seo; Jooho Lee; Taeyoon Lee; Jong-Hyun Ahn; Heon-Jin Choi; Seong Chan Jun
Journal:  Sci Rep       Date:  2015-07-21       Impact factor: 4.379

2.  Ion sensing with single charge resolution using sub-10-nm electrical double layer-gated silicon nanowire transistors.

Authors:  Qitao Hu; Si Chen; Paul Solomon; Zhen Zhang
Journal:  Sci Adv       Date:  2021-12-03       Impact factor: 14.136

3.  Lasing from Glassy Ge Quantum Dots in Crystalline Si.

Authors:  Martyna Grydlik; Florian Hackl; Heiko Groiss; Martin Glaser; Alma Halilovic; Thomas Fromherz; Wolfgang Jantsch; Friedrich Schäffler; Moritz Brehm
Journal:  ACS Photonics       Date:  2016-01-26       Impact factor: 7.529
  3 in total

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