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Literature DB >> 9999499

Evidence for low intrinsic surface-recombination velocity on p-type InP.

Abstract

Year: 1991 PMID： 9999499 DOI： 10.1103/physrevb.44.13097

Source DB: PubMed Journal: Phys Rev B Condens Matter ISSN： 0163-1829

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3 in total

1. A direct thin-film path towards low-cost large-area III-V photovoltaics.

Authors: Rehan Kapadia; Zhibin Yu; Hsin-Hua H Wang; Maxwell Zheng; Corsin Battaglia; Mark Hettick; Daisuke Kiriya; Kuniharu Takei; Peter Lobaccaro; Jeffrey W Beeman; Joel W Ager; Roya Maboudian; Daryl C Chrzan; Ali Javey
Journal: Sci Rep Date: 2013 Impact factor: 4.379

2. Surface Photovoltage-Induced Ultralow Work Function Material for Thermionic Energy Converters.

Authors: Peter Schindler; Daniel C Riley; Igor Bargatin; Kunal Sahasrabuddhe; Jared W Schwede; Steven Sun; Piero Pianetta; Zhi-Xun Shen; Roger T Howe; Nicholas A Melosh
Journal: ACS Energy Lett Date: 2019-07-24 Impact factor: 23.101

3. Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al₂O₃ with PO_x Interlayer.

Authors: L E Black; A Cavalli; M A Verheijen; J E M Haverkort; E P A M Bakkers; W M M Kessels
Journal: Nano Lett Date: 2017-09-11 Impact factor: 11.189

3 in total

Evidence for low intrinsic surface-recombination velocity on p-type InP.

1. A direct thin-film path towards low-cost large-area III-V photovoltaics.

2. Surface Photovoltage-Induced Ultralow Work Function Material for Thermionic Energy Converters.

3. Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer.

3. Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al₂O₃ with PO_x Interlayer.