Literature DB >> 9998396

Valence-band offsets at strained Si/Ge interfaces.

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Abstract

Year:  1991        PMID： 9998396     DOI： 10.1103/physrevb.44.5572

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  2 in total

1.  Study of the Structure, Electronic and Optical Properties of BiOI/Rutile-TiO2 Heterojunction by the First-Principle Calculation.

Authors:  Zhan Qu; Yali Su; Li Sun; Feng Liang; Guohe Zhang
Journal:  Materials (Basel)       Date:  2020-01-10       Impact factor: 3.623

2.  Effects of graphene intercalation on dielectric reliability of HfO2 and modulation of effective work function for Ni/Gr/c-HfO2 interfaces: first-principles study.

Authors:  Kehua Zhong; Yanmin Yang; Jian-Min Zhang; Guigui Xu; Zhigao Huang
Journal:  Sci Rep       Date:  2018-01-18       Impact factor: 4.379
  2 in total

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