Literature DB >> 9998389

Effect of the electron-plasmon interaction on the electron mobility in silicon.

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Abstract

Entities:  

Year:  1991        PMID： 9998389     DOI： 10.1103/physrevb.44.5527

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  1 in total

1.  Mobility enhancement in heavily doped semiconductors via electron cloaking.

Authors:  Jiawei Zhou; Hangtian Zhu; Qichen Song; Zhiwei Ding; Jun Mao; Zhifeng Ren; Gang Chen
Journal:  Nat Commun       Date:  2022-05-06       Impact factor: 17.694
  1 in total

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