Literature DB >> 9995870

Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band.

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Abstract

Entities:  

Year:  1990        PMID： 9995870     DOI： 10.1103/physrevb.42.3578

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  3 in total

1.  Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor.

Authors:  Toshiki Kanaki; Hiroki Yamasaki; Tomohiro Koyama; Daichi Chiba; Shinobu Ohya; Masaaki Tanaka
Journal:  Sci Rep       Date:  2018-05-08       Impact factor: 4.379

2.  Electron transport in a GaPSb film.

Authors:  Shun-Tsung Lo; Hung En Lin; Shu-Wei Wang; Huang-De Lin; Yu-Chung Chin; Hao-Hsiung Lin; Jheng-Cyuan Lin; Chi-Te Liang
Journal:  Nanoscale Res Lett       Date:  2012-11-23       Impact factor: 4.703

Review 3.  Mn-doped Ge and Si: A Review of the Experimental Status.

Authors:  Shengqiang Zhou; Heidemarie Schmidt
Journal:  Materials (Basel)       Date:  2010-11-26       Impact factor: 3.623
  3 in total

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