Literature DB >> 9995536

Surface-field-induced feature in the quantum yield of silicon near 3.5 eV.

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Abstract

Entities:  

Year:  1990        PMID: 9995536     DOI: 10.1103/physrevb.42.1262

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN: 0163-1829


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  3 in total

1.  Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs.

Authors:  Jon Geist; Deane Chandler-Horowitz; A M Robinson; C R James
Journal:  J Res Natl Inst Stand Technol       Date:  1991 Jul-Aug

2.  Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part II. Interpreting Oxide-Bias Experiments.

Authors:  Jon Geist; Rainer Köhler; Roland Goebel; A M Robinson; C R James
Journal:  J Res Natl Inst Stand Technol       Date:  1991 Jul-Aug

Review 3.  Multiple Exciton Generation in Colloidal Nanocrystals.

Authors:  Charles Smith; David Binks
Journal:  Nanomaterials (Basel)       Date:  2013-12-24       Impact factor: 5.076

  3 in total

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