Literature DB >> 9995473

Microstructure and strain relief of Ge films grown layer by layer on Si(001).

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Abstract

Entities:  

Year:  1990        PMID： 9995473     DOI： 10.1103/physrevb.42.11690

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  2 in total

1.  Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility.

Authors:  Vladimir A Yuryev; Larisa V Arapkina
Journal:  Nanoscale Res Lett       Date:  2011-09-05       Impact factor: 4.703

Review 2.  Germanium Based Field-Effect Transistors: Challenges and Opportunities.

Authors:  Patrick S Goley; Mantu K Hudait
Journal:  Materials (Basel)       Date:  2014-03-19       Impact factor: 3.623
  2 in total

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