Literature DB >> 9994384

Phenomenological description of ion-beam-induced epitaxial crystallization of amorphous silicon.

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Abstract

Entities:  

Year:  1990        PMID： 9994384     DOI： 10.1103/physrevb.41.5235

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  1 in total

1.  Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures.

Authors:  Manuel Radek; Bartosz Liedke; Bernd Schmidt; Matthias Voelskow; Lothar Bischoff; John Lundsgaard Hansen; Arne Nylandsted Larsen; Dominique Bougeard; Roman Böttger; Slawomir Prucnal; Matthias Posselt; Hartmut Bracht
Journal:  Materials (Basel)       Date:  2017-07-17       Impact factor: 3.623
  1 in total

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