Literature DB >> 9993670

Defect formation in a-Si:H.

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Abstract

Entities:  

Year:  1990        PMID： 9993670     DOI： 10.1103/physrevb.41.12150

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  1 in total

1.  Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks.

Authors:  Yuren Xiang; Chunlan Zhou; Endong Jia; Wenjing Wang
Journal:  Nanoscale Res Lett       Date:  2015-03-19       Impact factor: 4.703
  1 in total

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