Literature DB >> 9992684

Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures.

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Abstract

Entities:  

Year:  1989        PMID： 9992684     DOI： 10.1103/physrevb.40.6149

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  2 in total

1.  Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers.

Authors:  Dongzhi Hu; Claiborne Co McPheeters; Edward T Yu; Daniel M Schaadt
Journal:  Nanoscale Res Lett       Date:  2011-01-12       Impact factor: 4.703

2.  Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications.

Authors:  Nazaret Ruiz; Daniel Fernández; Lazar Stanojević; Teresa Ben; Sara Flores; Verónica Braza; Alejandro Gallego Carro; Esperanza Luna; José María Ulloa; David González
Journal:  Nanomaterials (Basel)       Date:  2022-04-15       Impact factor: 5.719
  2 in total

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