Literature DB >> 9992606

Near-band-gap photoluminescence of Si-Ge alloys.

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Abstract

Year:  1989        PMID： 9992606     DOI： 10.1103/physrevb.40.5683

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  9 in total

1.  Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices.

Authors:  C O'Dwyer; M Szachowicz; G Visimberga; V Lavayen; S B Newcomb; C M Sotomayor Torres
Journal:  Nat Nanotechnol       Date:  2009-02-01       Impact factor: 39.213

Review 2.  Silicon nanostructures for photonics and photovoltaics.

Authors:  Francesco Priolo; Tom Gregorkiewicz; Matteo Galli; Thomas F Krauss
Journal:  Nat Nanotechnol       Date:  2014-01       Impact factor: 39.213

3.  Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands.

Authors:  Samaresh Das; Kaustuv Das; Raj Kumar Singha; Santanu Manna; Achintya Dhar; Samit Kumar Ray; Arup Kumar Raychaudhuri
Journal:  Nanoscale Res Lett       Date:  2011-06-09       Impact factor: 4.703

4.  Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111).

Authors:  D J Lockwood; N L Rowell; A Benkouider; A Ronda; L Favre; I Berbezier
Journal:  Beilstein J Nanotechnol       Date:  2014-12-30       Impact factor: 3.649

5.  Electric tuning of direct-indirect optical transitions in silicon.

Authors:  J Noborisaka; K Nishiguchi; A Fujiwara
Journal:  Sci Rep       Date:  2014-11-07       Impact factor: 4.379

6.  Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy.

Authors:  Michael Zürch; Hung-Tzu Chang; Peter M Kraus; Scott K Cushing; Lauren J Borja; Andrey Gandman; Christopher J Kaplan; Myoung Hwan Oh; James S Prell; David Prendergast; Chaitanya D Pemmaraju; Daniel M Neumark; Stephen R Leone
Journal:  Struct Dyn       Date:  2017-06-06       Impact factor: 2.920

7.  Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate.

Authors:  Guangyang Lin; Ningli Chen; Lu Zhang; Zhiwei Huang; Wei Huang; Jianyuan Wang; Jianfang Xu; Songyan Chen; Cheng Li
Journal:  Materials (Basel)       Date:  2016-09-27       Impact factor: 3.623

8.  Dipole-allowed direct band gap silicon superlattices.

Authors:  Young Jun Oh; In-Ho Lee; Sunghyun Kim; Jooyoung Lee; Kee Joo Chang
Journal:  Sci Rep       Date:  2015-12-11       Impact factor: 4.379

9.  Optical nanoscopy of transient states in condensed matter.

Authors:  F Kuschewski; S C Kehr; B Green; Ch Bauer; M Gensch; L M Eng
Journal:  Sci Rep       Date:  2015-07-28       Impact factor: 4.379
  9 in total

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