Literature DB >> 9992580

Mechanisms of dopant impurity diffusion in silicon.

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Abstract

Entities:  

Year:  1989        PMID： 9992580     DOI： 10.1103/physrevb.40.5484

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  3 in total

1.  Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics.

Authors:  Zhiwei Chen; Binghui Ge; Wen Li; Siqi Lin; Jiawen Shen; Yunjie Chang; Riley Hanus; G Jeffrey Snyder; Yanzhong Pei
Journal:  Nat Commun       Date:  2017-01-04       Impact factor: 14.919

Review 2.  Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl).

Authors:  Ahmad Mostafa; Mamoun Medraj
Journal:  Materials (Basel)       Date:  2017-06-20       Impact factor: 3.623

3.  Effect of Si on the oxidation reaction of α-Ti(0 0 0 1) surface: ab initio molecular dynamics study.

Authors:  Somesh Kr Bhattacharya; Ryoji Sahara; Kyosuke Ueda; Takayuki Narushima
Journal:  Sci Technol Adv Mater       Date:  2017-12-13       Impact factor: 8.090
  3 in total

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