Literature DB >> 9991584

Isolated arsenic-antisite defect in GaAs and the properties of EL2.

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Abstract

Entities:  

Year:  1989        PMID： 9991584     DOI： 10.1103/physrevb.40.10391

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  1 in total

1.  Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures.

Authors:  Serhiy V Kondratenko; Sviatoslav A Iliash; Oleg V Vakulenko; Yuriy I Mazur; Mourad Benamara; Euclydes Marega; Gregory J Salamo
Journal:  Nanoscale Res Lett       Date:  2017-03-09       Impact factor: 4.703
  1 in total

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