Literature DB >> 9986096

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Abstract

Year:  1996        PMID： 9986096     DOI： 10.1103/physrevb.54.2491

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  10 in total

1.  High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires.

Authors:  Gwenole Jacopin; Lorenzo Rigutti; Andres De Luna Bugallo; François Henry Julien; Camilla Baratto; Elisabetta Comini; Matteo Ferroni; Maria Tchernycheva
Journal:  Nanoscale Res Lett       Date:  2011-08-19       Impact factor: 4.703

2.  InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters.

Authors:  Chee-Keong Tan; Damir Borovac; Wei Sun; Nelson Tansu
Journal:  Sci Rep       Date:  2016-01-13       Impact factor: 4.379

3.  Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures.

Authors:  Tong Wang; Tim J Puchtler; Saroj K Patra; Tongtong Zhu; John C Jarman; Rachel A Oliver; Stefan Schulz; Robert A Taylor
Journal:  Sci Rep       Date:  2017-09-21       Impact factor: 4.379

4.  Band Anti-Crossing Model in Dilute-As GaNAs Alloys.

Authors:  Justin C Goodrich; Damir Borovac; Chee-Keong Tan; Nelson Tansu
Journal:  Sci Rep       Date:  2019-03-26       Impact factor: 4.379

5.  Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate.

Authors:  Jongmyeong Kim; Seungmin Lee; Jehong Oh; Jungel Ryu; Yongjo Park; Seoung-Hwan Park; Euijoon Yoon
Journal:  Sci Rep       Date:  2019-06-04       Impact factor: 4.379

6.  Polarization-Induced Phase Transitions in Ultra-Thin InGaN-Based Double Quantum Wells.

Authors:  Sławomir P Łepkowski; Abdur Rehman Anwar
Journal:  Nanomaterials (Basel)       Date:  2022-07-14       Impact factor: 5.719

7.  Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection.

Authors:  Jinjian Zheng; Shuiqing Li; Chilun Chou; Wei Lin; Feilin Xun; Fei Guo; Tongchang Zheng; Shuping Li; Junyong Kang
Journal:  Sci Rep       Date:  2015-12-04       Impact factor: 4.379

8.  Topological insulator with negative spin-orbit coupling and transition between Weyl and Dirac semimetals in InGaN-based quantum wells.

Authors:  S P Łepkowski; W Bardyszewski
Journal:  Sci Rep       Date:  2018-10-18       Impact factor: 4.379

9.  Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells.

Authors:  A A Roble; S K Patra; F Massabuau; M Frentrup; M A Leontiadou; P Dawson; M J Kappers; R A Oliver; D M Graham; S Schulz
Journal:  Sci Rep       Date:  2019-12-11       Impact factor: 4.379

10.  Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers.

Authors:  Barsha Jain; Ravi Teja Velpula; Moulik Patel; Sharif Md Sadaf; Hieu Pham Trung Nguyen
Journal:  Micromachines (Basel)       Date:  2021-03-21       Impact factor: 2.891
  10 in total

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