Literature DB >> 9985904

Strain-related phenomena in GaN thin films.

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Abstract

Year:  1996        PMID： 9985904     DOI： 10.1103/physrevb.54.17745

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  20 in total

1.  Layered boron nitride as a release layer for mechanical transfer of GaN-based devices.

Authors:  Yasuyuki Kobayashi; Kazuhide Kumakura; Tetsuya Akasaka; Toshiki Makimoto
Journal:  Nature       Date:  2012-04-11       Impact factor: 49.962

2.  Strain-enhanced high Q-factor GaN micro-electromechanical resonator.

Authors:  Liwen Sang; Meiyong Liao; Xuelin Yang; Huanying Sun; Jie Zhang; Masatomo Sumiya; Bo Shen
Journal:  Sci Technol Adv Mater       Date:  2020-07-27       Impact factor: 8.090

3.  Direct growth of freestanding GaN on C-face SiC by HVPE.

Authors:  Yuan Tian; Yongliang Shao; Yongzhong Wu; Xiaopeng Hao; Lei Zhang; Yuanbin Dai; Qin Huo
Journal:  Sci Rep       Date:  2015-06-02       Impact factor: 4.379

4.  Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.

Authors:  Tzu-Hsuan Chang; Kanglin Xiong; Sung Hyun Park; Ge Yuan; Zhenqiang Ma; Jung Han
Journal:  Sci Rep       Date:  2017-07-25       Impact factor: 4.379

5.  Crystal Orientation Dynamics of Collective Zn dots before Preferential Nucleation.

Authors:  Chun-Chu Liu; Jun-Han Huang; Ching-Shun Ku; Shang-Jui Chiu; Jay Ghatak; Sanjaya Brahma; Chung-Wei Liu; Chuan-Pu Liu; Kuang-Yao Lo
Journal:  Sci Rep       Date:  2015-07-27       Impact factor: 4.379

6.  Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection.

Authors:  Jinjian Zheng; Shuiqing Li; Chilun Chou; Wei Lin; Feilin Xun; Fei Guo; Tongchang Zheng; Shuping Li; Junyong Kang
Journal:  Sci Rep       Date:  2015-12-04       Impact factor: 4.379

7.  Structural dynamics of GaN microcrystals in Evolutionary Selection Selective Area Growth probed by X-ray microdiffraction.

Authors:  V Kachkanov; B Leung; J Song; Y Zhang; M-C Tsai; G Yuan; J Han; K P O'Donnell
Journal:  Sci Rep       Date:  2014-04-11       Impact factor: 4.379

8.  Large area stress distribution in crystalline materials calculated from lattice deformation identified by electron backscatter diffraction.

Authors:  Yongliang Shao; Lei Zhang; Xiaopeng Hao; Yongzhong Wu; Yuanbin Dai; Yuan Tian; Qin Huo
Journal:  Sci Rep       Date:  2014-08-05       Impact factor: 4.379

9.  Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth.

Authors:  Priti Gupta; A A Rahman; Shruti Subramanian; Shalini Gupta; Arumugam Thamizhavel; Tatyana Orlova; Sergei Rouvimov; Suresh Vishwanath; Vladimir Protasenko; Masihhur R Laskar; Huili Grace Xing; Debdeep Jena; Arnab Bhattacharya
Journal:  Sci Rep       Date:  2016-03-30       Impact factor: 4.379

10.  Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy.

Authors:  Tongbo Wei; Jiankun Yang; Yang Wei; Ziqiang Huo; Xiaoli Ji; Yun Zhang; Junxi Wang; Jinmin Li; Shoushan Fan
Journal:  Sci Rep       Date:  2016-06-24       Impact factor: 4.379
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