Literature DB >> 9985759

Photoluminescence properties of surface-oxidized Ge nanocrystals: Surface localization of excitons.

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Abstract

Year:  1996        PMID： 9985759     DOI： 10.1103/physrevb.54.16421

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  3 in total

1.  Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application.

Authors:  Bhabani Shankar Sahu; Florence Gloux; Abdelilah Slaoui; Marzia Carrada; Dominique Muller; Jesse Groenen; Caroline Bonafos; Sandrine Lhostis
Journal:  Nanoscale Res Lett       Date:  2011-02-28       Impact factor: 4.703

2.  Carrier trapping and confinement in Ge nanocrystals surrounded by Ge3N4.

Authors:  Youngsin Park; Christopher C S Chan; Benjamin P L Reid; Luke Nuttall; Robert A Taylor; Nam-Suk Lee; Young Mi Lee
Journal:  Sci Rep       Date:  2016-05-05       Impact factor: 4.379

3.  Effect of Ge Nanocrystals on 1.54 μm Photoluminescence Enhancement in Er₂O₃:ZnO and Ge Co-Sputtered Films.

Authors:  Ranran Fan; Fei Lu; Kaikai Li
Journal:  Nanomaterials (Basel)       Date:  2017-10-11       Impact factor: 5.076
  3 in total

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