Literature DB >> 9984943

State filling and time-resolved photoluminescence of excited states in InxGa1-xAs/GaAs self-assembled quantum dots.

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Abstract

Year:  1996        PMID： 9984943     DOI： 10.1103/physrevb.54.11548

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  3 in total

1.  Quantum dot-like excitonic behavior in individual single walled-carbon nanotubes.

Authors:  Xu Wang; Jack A Alexander-Webber; Wei Jia; Benjamin P L Reid; Samuel D Stranks; Mark J Holmes; Christopher C S Chan; Chaoyong Deng; Robin J Nicholas; Robert A Taylor
Journal:  Sci Rep       Date:  2016-11-16       Impact factor: 4.379

2.  GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures.

Authors:  Siming Chen; Wei Li; Ziyang Zhang; David Childs; Kejia Zhou; Jonathan Orchard; Ken Kennedy; Maxime Hugues; Edmund Clarke; Ian Ross; Osamu Wada; Richard Hogg
Journal:  Nanoscale Res Lett       Date:  2015-08-25       Impact factor: 4.703

3.  Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots.

Authors:  Arka B Dey; Milan K Sanyal; Ian Farrer; Karthick Perumal; David A Ritchie; Qianqian Li; Jinsong Wu; Vinayak Dravid
Journal:  Sci Rep       Date:  2018-05-14       Impact factor: 4.379
  3 in total

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