Literature DB >> 9984923

Carrier relaxation and electronic structure in InAs self-assembled quantum dots.

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Abstract

Year:  1996        PMID： 9984923     DOI： 10.1103/physrevb.54.11346

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  2 in total

1.  The influence of surface trapping and dark states on the fluorescence emission efficiency and lifetime of CdSe and CdSe/ZnS quantum dots.

Authors:  Hong-Mei Gong; Zhang-Kai Zhou; Hao Song; Zhong-Hua Hao; Jun-Bo Han; Yue-Ying Zhai; Si Xiao; Qu-Quan Wang
Journal:  J Fluoresc       Date:  2007-08-10       Impact factor: 2.217

2.  Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure.

Authors:  Xiaolong Zhou; Yonghai Chen; Bo Xu
Journal:  Nanoscale Res Lett       Date:  2011-04-08       Impact factor: 4.703
  2 in total

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