Literature DB >> 9983483

Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition.

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Abstract

Year:  1996        PMID： 9983483     DOI： 10.1103/physrevb.53.16425

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  1 in total

1.  Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes.

Authors:  Hyun Jeong; Hyeon Jun Jeong; Hye Min Oh; Chang-Hee Hong; Eun-Kyung Suh; Gilles Lerondel; Mun Seok Jeong
Journal:  Sci Rep       Date:  2015-03-20       Impact factor: 4.379
  1 in total

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