Literature DB >> 9982710

Theory of GaN(101-bar0) and (112-bar0) surfaces.

.   

Abstract

Year:  1996        PMID： 9982710     DOI： 10.1103/physrevb.53.r10477

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


× No keyword cloud information.
  5 in total

1.  Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire.

Authors:  Atsunori Tanaka; Renjie Chen; Katherine L Jungjohann; Shadi A Dayeh
Journal:  Sci Rep       Date:  2015-11-27       Impact factor: 4.379

Review 2.  Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach.

Authors:  Yoshihiro Kangawa; Toru Akiyama; Tomonori Ito; Kenji Shiraishi; Takashi Nakayama
Journal:  Materials (Basel)       Date:  2013-08-06       Impact factor: 3.623

3.  Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111).

Authors:  Roman Volkov; Nikolai I Borgardt; Oleg V Konovalov; Sergio Fernández-Garrido; Oliver Brandt; Vladimir M Kaganer
Journal:  Nanoscale Adv       Date:  2021-12-03

4.  Migration mechanism of a GaN bicrystalline grain boundary as a model system.

Authors:  Sung Bo Lee; Seung Jo Yoo; Young-Min Kim; Jin-Gyu Kim; Heung Nam Han
Journal:  Sci Rep       Date:  2016-05-23       Impact factor: 4.379

5.  Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates.

Authors:  Alexana Roshko; Matt Brubaker; Paul Blanchard; Todd Harvey; Kris A Bertness
Journal:  Crystals (Basel)       Date:  2018       Impact factor: 2.589
  5 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.