Literature DB >> 9982646

Ion-energy effects in silicon ion-beam epitaxy.

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Abstract

Year:  1996        PMID： 9982646     DOI： 10.1103/physrevb.53.10781

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  2 in total

1.  Temperature dependent 29Si incorporation during deposition of highly enriched 28Si films.

Authors:  K J Dwyer; H S Kim; D S Simons; J M Pomeroy
Journal:  Phys Rev Mater       Date:  2017-11-16       Impact factor: 3.989

2.  Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon.

Authors:  Wanghua Chen; Romain Cariou; Gwenaëlle Hamon; Ronan Léal; Jean-Luc Maurice; Pere Roca I Cabarrocas
Journal:  Sci Rep       Date:  2017-03-06       Impact factor: 4.379
  2 in total

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