Literature DB >> 9981356

Directed inelastic hopping of electrons through metal-insulator-metal tunnel junctions.

.   

Abstract

Year:  1995        PMID： 9981356     DOI： 10.1103/physrevb.52.2843

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


× No keyword cloud information.
  5 in total

1.  Resistivity dependence of magnetoresistance in Co/ZnO films.

Authors:  Zhi-Yong Quan; Li Zhang; Wei Liu; Hao Zeng; Xiao-Hong Xu
Journal:  Nanoscale Res Lett       Date:  2014-01-06       Impact factor: 4.703

2.  Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials.

Authors:  Xiaoli Li; Juan Jia; Yanchun Li; Yuhao Bai; Jie Li; Yana Shi; Lanfang Wang; Xiaohong Xu
Journal:  Sci Rep       Date:  2016-09-02       Impact factor: 4.379

3.  Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport.

Authors:  Yanghua Lu; Sirui Feng; Runjiang Shen; Yujun Xu; Zhenzhen Hao; Yanfei Yan; Haonan Zheng; Xutao Yu; Qiuyue Gao; Panpan Zhang; Shisheng Lin
Journal:  Research (Wash D C)       Date:  2019-11-15

4.  Electrically programmable magnetoresistance in [Formula: see text]-based magnetic tunnel junctions.

Authors:  Jhen-Yong Hong; Chen-Feng Hung; Kui-Hon Ou Yang; Kuan-Chia Chiu; Dah-Chin Ling; Wen-Chung Chiang; Minn-Tsong Lin
Journal:  Sci Rep       Date:  2021-03-16       Impact factor: 4.379

5.  Direct-Current Generator Based on Dynamic PN Junctions with the Designed Voltage Output.

Authors:  Yanghua Lu; Zhenzhen Hao; Sirui Feng; Runjiang Shen; Yanfei Yan; Shisheng Lin
Journal:  iScience       Date:  2019-11-06
  5 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.