Literature DB >> 9981348

Linewidth analysis of the photoluminescence of InxGa1-xAs/GaAs quantum wells (x=0.09, 0.18, 1.0).

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Abstract

Year:  1995        PMID: 9981348     DOI: 10.1103/physrevb.52.2784

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN: 0163-1829


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  2 in total

1.  Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement.

Authors:  Garry W Mudd; Simon A Svatek; Tianhang Ren; Amalia Patanè; Oleg Makarovsky; Laurence Eaves; Peter H Beton; Zakhar D Kovalyuk; George V Lashkarev; Zakhar R Kudrynskyi; Alexandr I Dmitriev
Journal:  Adv Mater       Date:  2013-08-21       Impact factor: 30.849

2.  Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots.

Authors:  Arka B Dey; Milan K Sanyal; Ian Farrer; Karthick Perumal; David A Ritchie; Qianqian Li; Jinsong Wu; Vinayak Dravid
Journal:  Sci Rep       Date:  2018-05-14       Impact factor: 4.379

  2 in total

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