Literature DB >> 9981122

Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry.

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Abstract

Entities:  

Year:  1995        PMID： 9981122     DOI： 10.1103/physrevb.52.r17028

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  2 in total

1.  The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures.

Authors:  Kamil Koronski; Krzysztof P Korona; Serhii Kryvyi; Aleksandra Wierzbicka; Kamil Sobczak; Stanislaw Krukowski; Pawel Strak; Eva Monroy; Agata Kaminska
Journal:  Materials (Basel)       Date:  2022-04-08       Impact factor: 3.748

2.  Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers.

Authors:  Tongtong Zhu; Tao Ding; Fengzai Tang; Yisong Han; Muhammad Ali; Tom Badcock; Menno J Kappers; Andrew J Shields; Stoyan K Smoukov; Rachel A Oliver
Journal:  Cryst Growth Des       Date:  2015-12-29       Impact factor: 4.076
  2 in total

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