Literature DB >> 9979811

First-principles calculations of effective-mass parameters of AlN and GaN.

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Abstract

Year:  1995        PMID： 9979811     DOI： 10.1103/physrevb.52.8132

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  6 in total

1.  Dilute-As AlNAs Alloy for Deep-Ultraviolet Emitter.

Authors:  Chee-Keong Tan; Damir Borovac; Wei Sun; Nelson Tansu
Journal:  Sci Rep       Date:  2016-02-24       Impact factor: 4.379

2.  Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.

Authors:  Bogdan I Tsykaniuk; Andrii S Nikolenko; Viktor V Strelchuk; Viktor M Naseka; Yuriy I Mazur; Morgan E Ware; Eric A DeCuir; Bogdan Sadovyi; Jan L Weyher; Rafal Jakiela; Gregory J Salamo; Alexander E Belyaev
Journal:  Nanoscale Res Lett       Date:  2017-06-08       Impact factor: 4.703

3.  Rectifying the output of vibrational piezoelectric energy harvester using quantum dots.

Authors:  Lijie Li
Journal:  Sci Rep       Date:  2017-03-20       Impact factor: 4.379

4.  First-Principle Electronic Properties of Dilute-P GaN(1-x)P(x) Alloy for Visible Light Emitters.

Authors:  Chee-Keong Tan; Damir Borovac; Wei Sun; Nelson Tansu
Journal:  Sci Rep       Date:  2016-04-14       Impact factor: 4.379

5.  Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion.

Authors:  Wei-Chun Tan; Chia-Wei Chiang; Mario Hofmann; Yang-Fang Chen
Journal:  Sci Rep       Date:  2016-08-10       Impact factor: 4.379

6.  Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes.

Authors:  Yong Wang; Zihui Zhang; Long Guo; Yuxuan Chen; Yahui Li; Zhanbin Qi; Jianwei Ben; Xiaojuan Sun; Dabing Li
Journal:  Nanomaterials (Basel)       Date:  2021-12-07       Impact factor: 5.076
  6 in total

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