Literature DB >> 9979357

Hydrogen-mediated creation and annihilation of strain in amorphous silicon.

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Abstract

Entities:  

Year:  1995        PMID： 9979357     DOI： 10.1103/physrevb.51.4872

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  2 in total

1.  Atomic Structure Evaluation of Solution-Processed a-IZO Films and Electrical Behavior of a-IZO TFTs.

Authors:  Dongwook Kim; Hyeonju Lee; Bokyung Kim; Xue Zhang; Jin-Hyuk Bae; Jong-Sun Choi; Sungkeun Baang
Journal:  Materials (Basel)       Date:  2022-05-10       Impact factor: 3.748

2.  Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers.

Authors:  Cesare Frigeri; Miklós Serényi; Nguyen Quoc Khánh; Attila Csik; Ferenc Riesz; Zoltán Erdélyi; Lucia Nasi; Dezső László Beke; Hans-Gerd Boyen
Journal:  Nanoscale Res Lett       Date:  2011-03-01       Impact factor: 4.703
  2 in total

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