Literature DB >> 9979261

Generalized diffusion-reaction model for the low-field charge-buildup instability at the Si-SiO2 interface.

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Abstract

Entities:  

Year:  1995        PMID： 9979261     DOI： 10.1103/physrevb.51.4218

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  1 in total

1.  Role of hydrogen in volatile behaviour of defects in SiO2-based electronic devices.

Authors:  Yannick Wimmer; Al-Moatasem El-Sayed; Wolfgang Gös; Tibor Grasser; Alexander L Shluger
Journal:  Proc Math Phys Eng Sci       Date:  2016-06       Impact factor: 2.704
  1 in total

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