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Literature DB >> 9978886

Visible photoluminescence from nanocrystallite Ge embedded in a glassy SiO2 matrix: Evidence in support of the quantum-confinement mechanism.

Abstract

Entities: Chemical

Year: 1995 PMID： 9978886 DOI： 10.1103/physrevb.51.1658

Source DB: PubMed Journal: Phys Rev B Condens Matter ISSN： 0163-1829

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9 in total

1. Fabrication and characteristics of porous germanium films.

Authors: Chengbin Jing; Chuanjian Zhang; Xiaodan Zang; Wenzheng Zhou; Wei Bai; Tie Lin; Junhao Chu
Journal: Sci Technol Adv Mater Date: 2009-12-29 Impact factor: 8.090

2. Optical and electrical properties of undoped and doped Ge nanocrystals.

Authors: Samaresh Das; Rakesh Aluguri; Santanu Manna; Rajkumar Singha; Achintya Dhar; Lorenzo Pavesi; Samit Kumar Ray
Journal: Nanoscale Res Lett Date: 2012-02-20 Impact factor: 4.703

3. Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application.

Authors: Bhabani Shankar Sahu; Florence Gloux; Abdelilah Slaoui; Marzia Carrada; Dominique Muller; Jesse Groenen; Caroline Bonafos; Sandrine Lhostis
Journal: Nanoscale Res Lett Date: 2011-02-28 Impact factor: 4.703

Visible photoluminescence from nanocrystallite Ge embedded in a glassy SiO2 matrix: Evidence in support of the quantum-confinement mechanism.

1. Fabrication and characteristics of porous germanium films.

2. Optical and electrical properties of undoped and doped Ge nanocrystals.

3. Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application.

4. Germanium quantum dot/nitrogen-doped graphene nanocomposite for high-performance bulk heterojunction solar cells.

5. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrO_x-Based Structures.

6. Comparison of the Optical Properties of Graphene and Alkyl-terminated Si and Ge Quantum Dots.

7. Enhanced photoluminescence from porous silicon nanowire arrays.

8. Carrier trapping and confinement in Ge nanocrystals surrounded by Ge3N4.

9. Effect of Ge Nanocrystals on 1.54 μm Photoluminescence Enhancement in Er₂O₃:ZnO and Ge Co-Sputtered Films.