Literature DB >> 9978867

GW self-energy calculations of carrier-induced band-gap narrowing in n-type silicon.

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Abstract

Entities:  

Year:  1995        PMID： 9978867     DOI： 10.1103/physrevb.51.1527

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  1 in total

1.  Hot phonon and carrier relaxation in Si(100) determined by transient extreme ultraviolet spectroscopy.

Authors:  Scott K Cushing; Michael Zürch; Peter M Kraus; Lucas M Carneiro; Angela Lee; Hung-Tzu Chang; Christopher J Kaplan; Stephen R Leone
Journal:  Struct Dyn       Date:  2018-09-11       Impact factor: 2.920
  1 in total

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