Literature DB >> 9978854

Low-temperature anti-Stokes luminescence mediated by disorder in semiconductor quantum-well structures.

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Abstract

Year:  1995        PMID： 9978854     DOI： 10.1103/physrevb.51.18053

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  4 in total

1.  Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode.

Authors:  Byung Oh Jung; Si-Young Bae; Seunga Lee; Sang Yun Kim; Jeong Yong Lee; Yoshio Honda; Hiroshi Amano
Journal:  Nanoscale Res Lett       Date:  2016-04-22       Impact factor: 4.703

2.  Enabling valley selective exciton scattering in monolayer WSe2 through upconversion.

Authors:  M Manca; M M Glazov; C Robert; F Cadiz; T Taniguchi; K Watanabe; E Courtade; T Amand; P Renucci; X Marie; G Wang; B Urbaszek
Journal:  Nat Commun       Date:  2017-04-03       Impact factor: 14.919

3.  Designing Semiconductor Nanowires for Efficient Photon Upconversion via Heterostructure Engineering.

Authors:  Mattias Jansson; Fumitaro Ishikawa; Weimin M Chen; Irina A Buyanova
Journal:  ACS Nano       Date:  2022-07-25       Impact factor: 18.027

4.  Control of hot-carrier relaxation for realizing ideal quantum-dot intermediate-band solar cells.

Authors:  David M Tex; Itaru Kamiya; Yoshihiko Kanemitsu
Journal:  Sci Rep       Date:  2014-02-18       Impact factor: 4.379
  4 in total

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