Literature DB >> 9978682

High-pressure effects in the layered semiconductor germanium selenide.

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Abstract

Entities:  

Year:  1995        PMID： 9978682     DOI： 10.1103/physrevb.51.16750

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  6 in total

1.  Structural phase transition of SnSe under uniaxial stress and hydrostatic pressure: an ab initio study.

Authors:  Sebahaddin Alptekin
Journal:  J Mol Model       Date:  2011-03-01       Impact factor: 1.810

2.  Pressure-induced improvement in symmetry and change in electronic properties of SnSe.

Authors:  Jingjing Peng; Wei Li; Yu Wang; Xiaoyan Yu; Junming Liu; Qinyu He
Journal:  J Mol Model       Date:  2017-10-23       Impact factor: 1.810

3.  Effects of stacking method and strain on the electronic properties of the few-layer group-IVA monochalcogenide heterojunctions.

Authors:  Yonghong Hu; Caixia Mao; Zhong Yan; Ting Shu; Hao Ni; Li Xue; Yunyi Wu
Journal:  RSC Adv       Date:  2018-08-23       Impact factor: 4.036

4.  Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations.

Authors:  Yuliang Mao; Xin Mao; Hongquan Zhao; Nandi Zhang; Xuan Shi; Jianmei Yuan
Journal:  Sci Rep       Date:  2018-12-05       Impact factor: 4.379

5.  Evolution of the Structural, Mechanical, and Phonon Properties of GeSe Polymorphs in a Pressure-Induced Second-Order Phase Transition.

Authors:  Jianhui Yang; Qiang Fan; Bing Xiao; Yingchun Ding
Journal:  Materials (Basel)       Date:  2019-11-03       Impact factor: 3.623

6.  1D/2D van der Waals Heterojunctions Composed of Carbon Nanotubes and a GeSe Monolayer.

Authors:  Yuliang Mao; Zheng Guo; Jianmei Yuan; Tao Sun
Journal:  Nanomaterials (Basel)       Date:  2021-06-14       Impact factor: 5.076
  6 in total

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