Literature DB >> 9977635

Formation of anion vacancies by Langmuir evaporation from InP and GaAs (110) surfaces at low temperatures.

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Abstract

Year:  1995        PMID: 9977635     DOI: 10.1103/physrevb.51.9696

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN: 0163-1829


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  1 in total

1.  Resistive switching in optoelectronic III-V materials based on deep traps.

Authors:  M Schnedler; V Portz; U Semmler; M Moors; R Waser; R E Dunin-Borkowski; Ph Ebert
Journal:  Sci Rep       Date:  2018-06-21       Impact factor: 4.379

  1 in total

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