Literature DB >> 9976341

Photoluminescence from strained InAs monolayers in GaAs under pressure.

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Abstract

Year:  1994        PMID： 9976341     DOI： 10.1103/physrevb.50.1575

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  1 in total

1.  Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes.

Authors:  P Y Zhou; X M Dou; X F Wu; K Ding; M F Li; H Q Ni; Z C Niu; D S Jiang; B Q Sun
Journal:  Sci Rep       Date:  2014-01-10       Impact factor: 4.379
  1 in total

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