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Literature DB >> 9974866

Initial stages of InAs epitaxy on vicinal GaAs(001)-(2 x 4).

Abstract

Year: 1994 PMID： 9974866 DOI： 10.1103/physrevb.50.8479

Source DB: PubMed Journal: Phys Rev B Condens Matter ISSN： 0163-1829

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2 in total

1. Submonolayer quantum dots for high speed surface emitting lasers.

Authors: Nn Ledentsov; D Bimberg; F Hopfer; A Mutig; Va Shchukin; Av Savel'ev; G Fiol; E Stock; H Eisele; M Dähne; D Gerthsen; U Fischer; D Litvinov; A Rosenauer; Ss Mikhrin; Ar Kovsh; Nd Zakharov; P Werner
Journal: Nanoscale Res Lett Date: 2007-08-10 Impact factor: 4.703

2. Nanoscale distribution of Bi atoms in InP_1-xBi_x.

Authors: Liyao Zhang; Mingjian Wu; Xiren Chen; Xiaoyan Wu; Erdmann Spiecker; Yuxin Song; Wenwu Pan; Yaoyao Li; Li Yue; Jun Shao; Shumin Wang
Journal: Sci Rep Date: 2017-09-25 Impact factor: 4.379

2 in total

Initial stages of InAs epitaxy on vicinal GaAs(001)-(2 x 4).

1. Submonolayer quantum dots for high speed surface emitting lasers.

2. Nanoscale distribution of Bi atoms in InP1-xBix.

2. Nanoscale distribution of Bi atoms in InP_1-xBi_x.