Literature DB >> 9974812

Atomic geometry and electronic structure of native defects in GaN.

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Abstract

Year:  1994        PMID： 9974812     DOI： 10.1103/physrevb.50.8067

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  2 in total

1.  Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy.

Authors:  PeiTsen Wu; Mitsuru Funato; Yoichi Kawakami
Journal:  Sci Rep       Date:  2015-11-30       Impact factor: 4.379

Review 2.  AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects.

Authors:  Songrui Zhao; Jiaying Lu; Xu Hai; Xue Yin
Journal:  Micromachines (Basel)       Date:  2020-01-23       Impact factor: 2.891
  2 in total

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