Literature DB >> 9948188

Dopant concentration dependences and symmetric Fermi-level movement for metal/n-type and p-type GaAs(110) interfaces formed at 60 K.

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Abstract

Year:  1989        PMID： 9948188     DOI： 10.1103/physrevb.39.12977

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  1 in total

1.  Investigation on energy bandgap states of amorphous SiZnSnO thin films.

Authors:  Byeong Hyeon Lee; Kyung-Sang Cho; Doo-Yong Lee; Ahrum Sohn; Ji Ye Lee; Hyuck Choo; Sungkyun Park; Sang-Woo Kim; Sangsig Kim; Sang Yeol Lee
Journal:  Sci Rep       Date:  2019-12-17       Impact factor: 4.379
  1 in total

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