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Literature DB >> 9948154

Effect of nonparabolicity in GaAs/Ga1-xAlxAs semiconductor quantum wells.

Abstract

Year: 1989 PMID： 9948154 DOI： 10.1103/physrevb.39.12808

Source DB: PubMed Journal: Phys Rev B Condens Matter ISSN： 0163-1829

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1 in total

1. Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al _x Ga_1-x As/GaAs quantum wells by magneto-photoluminescence.

Authors: S Haldar; V K Dixit; Geetanjali Vashisht; Shailesh Kumar Khamari; S Porwal; T K Sharma; S M Oak
Journal: Sci Rep Date: 2017-07-07 Impact factor: 4.379

1 in total

Effect of nonparabolicity in GaAs/Ga1-xAlxAs semiconductor quantum wells.

1. Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al x Ga1-x As/GaAs quantum wells by magneto-photoluminescence.

1. Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al _x Ga_1-x As/GaAs quantum wells by magneto-photoluminescence.