Literature DB >> 9946436

Motional effects between on-center and off-center substitutional nitrogen in silicon.

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Abstract

Entities:  

Year:  1988        PMID： 9946436     DOI： 10.1103/physrevb.38.1589

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  1 in total

1.  Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon.

Authors:  Zhen Zhu; Hezhu Shao; Xiao Dong; Ning Li; Bo-Yuan Ning; Xi-Jing Ning; Li Zhao; Jun Zhuang
Journal:  Sci Rep       Date:  2015-05-27       Impact factor: 4.379
  1 in total

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