Literature DB >> 9944172

Anomalous telegraph noise in small-area silicon metal-oxide-semiconductor field-effect transistors.

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Abstract

Entities:  

Year:  1988        PMID： 9944172     DOI： 10.1103/physrevb.37.8346

Source DB:  PubMed          Journal:  Phys Rev B Condens Matter        ISSN： 0163-1829


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  5 in total

1.  One-by-one trap activation in silicon nanowire transistors.

Authors:  N Clément; K Nishiguchi; A Fujiwara; D Vuillaume
Journal:  Nat Commun       Date:  2010-10-19       Impact factor: 14.919

2.  Local field effect on charge-capture/emission dynamics.

Authors:  Kin P Cheung; Dmitry Veksler; Jason P Campbell
Journal:  IEEE Trans Electron Devices       Date:  2017-10-30       Impact factor: 2.917

3.  Role of hydrogen in volatile behaviour of defects in SiO2-based electronic devices.

Authors:  Yannick Wimmer; Al-Moatasem El-Sayed; Wolfgang Gös; Tibor Grasser; Alexander L Shluger
Journal:  Proc Math Phys Eng Sci       Date:  2016-06       Impact factor: 2.704

4.  Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps.

Authors:  Shaofeng Guo; Runsheng Wang; Dongyuan Mao; Yangyuan Wang; Ru Huang
Journal:  Sci Rep       Date:  2017-07-24       Impact factor: 4.379

Review 5.  Random Telegraph Noise in 3D NAND Flash Memories.

Authors:  Alessandro S Spinelli; Gerardo Malavena; Andrea L Lacaita; Christian Monzio Compagnoni
Journal:  Micromachines (Basel)       Date:  2021-06-16       Impact factor: 2.891
  5 in total

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